M. Ostermayr

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This paper presents performance evaluation of high-κ/metal gate (HK/MG) process on an industry standard 45nm low power microprocessor built on bulk substrate. CMOS devices built with HK/MG demonstrate 50% improvement in NFET and 65% improvement in PFET drive current when compared with industry standard 45nm Poly/SiON devices. No additional stress(More)
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