M. O. Manasreh

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Normal incident photodetection at mid infrared spectral region is achieved using the intersublevel transitions from strain-free GaAs quantum dot pairs in Al(0.3)Ga(0.7)As matrix. The GaAs quantum dot pairs are fabricated by high temperature droplet epitaxy, through which zero strain quantum dot pairs are obtained from lattice matched materials.(More)
Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm for undoped, Si-, and Mg-doped samples. These peaks are related to CH, CH2,(More)
Silicon Carbide (SiC) devices provides for better performance in photovoltaic (PV) and distributed energy resource (DER) inverters. Switches based on SiC can tolerate higher temperatures, accommodates high voltages, and can operate at higher frequencies. The boost inverter presented is a single stage inverter topology that lowers or attenuates the input dc(More)
A comprehensive investigation of the optical properties of InAs/InP(001) quantum wires (QWrs) and their parent quantum well system formed by the deposition of 4 ML (monolayers) of InAs on InP is carried out by means of temperature dependent photoluminescence (PL) and Fourier transform infrared spectroscopy. Unusual two-branch switching of the excitonic PL(More)
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