M. Ntogramatzi

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A new analytical model for the CMOS inverter is introduced. This model results by solving analytically the differential equation which describes the inverter operation. It uses new simplified transistor current expressions which are developed taking into account the nanoscale effects and also considering temperature as a parameter. Expressions for the(More)
In this paper, an alternative approach for performing the pre-characterization of CMOS digital gates is proposed. This method aims to eliminate the use of circuit simulators like HSPICE during the cell pre-characterization in order to accelerate it. This procedure is necessary for the operation of technology models such as CCS, NLDM and NLPM. This is(More)
This paper illustrates the Power Contributors method into modeling of leakage currents and static power consumption for different CMOS cells from the NanGate OpenCell library. These cells are decomposed into Power Contributors, and all the leakage currents which run through their terminals, are modeled in a systematic way. The results prove that this method(More)
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