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A new analytical model for the CMOS inverter is introduced. This model results by solving analytically the differential equation which describes the inverter operation. It uses new simplified transistor current expressions which are developed taking into account the nanoscale effects and also considering temperature as a parameter. Expressions for the(More)
This paper illustrates the Power Contributors method into modeling of leakage currents and static power consumption for different CMOS cells from the NanGate OpenCell library. These cells are decomposed into Power Contributors, and all the leakage currents which run through their terminals, are modeled in a systematic way. The results prove that this method(More)
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