M. N. Kozicki

Learn More
Programmable metallization cell (PMC) memory utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. A silver or copper layer and an inert electrode formed in contact with a Ag/sup +/or Cu/sup 2+/-containing electrolyte film creates a device in which information is stored using large nonvolatile resistance(More)
We have investigated silver diffusion driven by heating or irradiation with light in sulfur-rich Ge–S thin films close to the composition Ge S . Quantitative data regarding the amount of diffused silver has been gathered using Rutherford backscattering 20 80 spectrometry. Thermal diffusion produces films with 35 at.% silver in the glassy matrix at(More)
We investigate the nature of thin films formed by the photodissolution of Ag into Se-rich Ge–Se glasses for use in programmable metallization cell devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. The way in which Ag incorporates into the chalcogenide film during photodiffusion is(More)
Programmable metallization cell (PMC) memory is based on the electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. It shows great promise as an ultrascalable solid state non-volatile memory as it requires low programming voltage and current, and has the ability for the storage cells to be physically sized at minimum(More)
We make a brief review on the effect of silver photodiffusion in Ge-chalcogenide glasses and report some of our recent results in this aspect. Using Raman spectroscopy and X-ray diffraction analysis we demonstrate that the hosting backbone undergoes depletion in chalcogen due to the specific conditions of photodiffusion and the diffusion products are silver(More)
M. BALAKRISHNAN, M. N. KOZICKI, C. POWELEIT, S. BHAGAT, T. L. ALFORD, M. MITKOVA a Center for Applied Nanoionics, Arizona State University, Tempe, AZ 85287-6206, USA b Department of Physics, Arizona State University, Tempe, AZ 852871504, USA c School of Materials, Arizona State University, Tempe, AZ 852818706, USA c Department of Electrical & Computer(More)
The morphology of electrochemically grown Ag deposits on the surface of thin !lms of Ag-doped germanium chalcogenide solid electrolytes is discussed. The morphology of the electrodeposits is closely related to the composition and nanoscale morphology of the Ag–Ge–Se electrolyte, which itself is nanophase separated in character. Applications of the surface(More)
We report the results of our study on the influence of total ionization dose (TID) on lateral diffusion of some selected metals into chalcogenide glasses of different composition and variable atomic ratio. ACKNOWLEDGEMENTS This work was funded in part by the Defense Threat Reduction Agency under grant no. HDTRA1-11-1-0055 and Air Force Research Laboratory(More)
This paper presents a study of Cu diffusion at various temperatures in thin SiO2 films. Film composition and diffusion products were analyzed using Secondary Ion Mass Spectroscopy, Rutherford Backscattering Spectrometry, X-ray Diffraction and Raman Spectroscopy methods. We found a strong dependence of the diffused Cu concentration, which varied between 0.8(More)
  • 1