M. Montes Bajo

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Keywords: AlGaN/GaN high electron mobility transistor OFF-state stress Gate leakage Electric field Electroluminescence Surface defect a b s t r a c t Gate degradation in high electron mobility transistors (HEMTs) under OFF-state stress results from the high electric field near the gate edge. We investigate the evolution of this field over time in AlGaN/ GaN(More)
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