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Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give a unique output in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend(More)
By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad(More)
By optimising the epitaxial layer profile of InGaAs-InAlAs pHEMTs we have demonstrated improved DC and RF performance from a new, low-cost, 1 µm-gate device structure in terms of breakdown voltage, leakage current and output conductance. A simple fabrication process is employed that does not use double-recess or composite-channel structures. No penalty was(More)
(2012). Diamond heat sinking of terahertz antennas for continuous-wave photomixing. The generation of cw Terahertz radiation from photomixing in low-temperature grown GaAs is limited by the thermal load for single emitters. We propose a new heat sinking scheme based on high thermal conductivity, transparent crystalline heat spreaders as diamond in direct(More)
We demonstrate, for the first time, an all-optoelectronic continuous-wave terahertz photomixing system that uses low-temperature grown InGaAs devices both for emitters and coherent homodyne detectors. The system is compatible with fiber-optic excitation wavelengths, and we compare the performance to the more common LT-GaAs photomixers.
This paper presents a theoretical investigation into the feasibility of designing tunable resonators and circulators exploiting the gyroelectric behavior of the high-mobility 2-D electron gas (2-DEG). Operational regions are assigned and the resonant and perfect circulation conditions for 2-DEG materials analyzed to demonstrate the potential of the design.(More)
This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or Indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 μA/mm, are demonstrated by these(More)
In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of(More)
A set of novel left-handed LH) basic block monolithic-microwave integrated-circuit (MMIC) components (transmission line, open and short stubs) are presented with applications to the RF/microwave filter and power divider. These new open and short LH MMIC resonators have compact sizes of 0.11 and 0.22 mm<sup>2</sup>, respectively. The prototypes of an LH(More)