M. McCurdy

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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Abstract—Factors that affect single-event transient pulse widths, such as(More)
– The Tactical Information Technologies for Assured Network Operations (TITAN) Program aims to achieve net-centric information and knowledge management and dissemination integrated with data-to-decision C2 Applications. TITAN is a multi-year effort to develop, demonstrate and mature information and knowledge (I&K) management and dissemination (M&D) services(More)
—The single-event-transient response of InGaAs MOS-FETs exposed to heavy-ion and laser irradiations is investigated. The large barrier between the gate oxide and semiconductor regions effectively suppresses the gate transients compared with other types of III-V FETs. After the initial radiation-induced pulse, electrons and holes flood into the channel(More)
Vanderbilt University School of Engineering's Pelletron has been used to conduct single event effects, displacement damage and total ionizing dose testing on electronics and materials. A custom vacuum chamber with adjustable stage and various feedthroughs facilitate testing. Beam scattering using thin gold foils provide good beam uniformity over(More)
Two 32nm SOI single-event upset test chips have been irradiated at LBNL and TAMU heavy ion test facilities. The test chips include unhardened and RHBD designs such as DICE, LEAP DICE, and stacking devices. SEU cross-section data are presented for the hardened and unhardened flip-flop designs across test facility, beam tune, angle of incidence, and clock(More)
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