M. McCurdy

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The single-event-transient response of InGaAs MOSFETs exposed to heavy-ion and laser irradiations is investigated. The large barrier between the gate oxide and semiconductor regions effectively suppresses the gate transients compared with other types of III-V FETs. After the initial radiation-induced pulse, electrons and holes flood into the channel region(More)
The Tactical Information Technologies for Assured Network Operations (TITAN) Program aims to achieve netcentric information and knowledge management and dissemination integrated with data-to-decision C2 Applications. TITAN is a multi-year effort to develop, demonstrate and mature information and knowledge (I&K) management and dissemination (M&D) services(More)
Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average(More)
Vanderbilt University School of Engineering's Pelletron has been used to conduct single event effects, displacement damage and total ionizing dose testing on electronics and materials. A custom vacuum chamber with adjustable stage and various feedthroughs facilitate testing. Beam scattering using thin gold foils provide good beam uniformity over(More)
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