Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is… (More)
Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction diode is demonstrated. The device exhibits typical Schottky diode current-voltage characteristics with a turn-on voltage of 0.7 V. Electroluminescence characterization shows good random lasing behavior and the output power is about 67 nW at a drive current of 100 mA. Excitonic… (More)
A heterostructure device consisting of nitrogen-doped Mg 0.12 Zn 0.88 O and gallium-doped ZnO thin films was grown on c-plane sapphire substrate using RF plasma-assisted molecular beam epitaxy. Current–voltage and photocurrent characteristics indicate the formation of a p–n junction. Random lasing behavior with lasing modes centered at 356 nm was observed.… (More)
Articles you may be interested in Energy-selective multichannel ultraviolet photodiodes based on (Mg,Zn)O Appl. The effect of oxygen flow rate and radio frequency plasma power on cubic ZnMgO ultraviolet sensors grown by plasma-enhanced molecular beam epitaxy Appl. Electrically pumped near-ultraviolet lasing from ZnO/MgO core/shell nanowires Appl.
Understanding the flow fields at the micro-scale is key to developing methods of successfully mixing fluids for micro-scale applications. This paper investigates flow characteristics and mixing efficiency of three different geometries in micro-channels. The geometries of these channels were rectangular with a dimension of; 300 m wide, 100 m deep and 50 mm… (More)