Learn More
The seventh edition of the haemophilia B database lists in easily accessible form all known factor IX mutations due to small changes (base substitutions and short additions and/or deletions of <30 bp) identified in haemophilia B patients. The 1535 patient entries are ordered by the nucleotide number of their mutation. Where known, details are given on:(More)
F.Giannelli, P.M.Green, K.A.High1, S.Sommer2, M.-C.Poon3, M.Ludwig4, R.Schwaab4, P.H.Reitsma5, M.Goossens6, A.Yoshioka7 and G.G.Brownlee8 Paediatric Research Unit, Guy's Tower, London Bridge, London SE1 9RT, UK, 1The Children's Hospital of Philadelphia, Division of Hematology, Room 5132, 34th Street & Civic Centre Boulevard, Philadelphia, PA, 2Mayo Clinic,(More)
The eighth edition of the haemophilia B database (http://www.umds.ac. uk/molgen/haemBdatabase.htm ) lists in an easily accessible form all known factor IX mutations due to small changes (base substitutions and short additions and/or deletions of <30 bp) identified in haemophilia B patients. The 1713 patient entries are ordered by the nucleotide number of(More)
The sixth edition of the haemophilia B database lists in easily accessible form all known factor IX mutations due to small changes (base substitutions and short additions and/or deletions of <30 bp) identified in haemophilia B patients. The 1380 patient entries are ordered by the nucleotide number of their mutation. Where known, details are given on factor(More)
“Because they know what they do” should be the contribution of cancer registration to prevention. The public should be informed about the successes and failures of prevention. In addition, each doctor and each hospital should know the long-term results for its patients despite the complex interdisciplinary health care provision. At the same time, the(More)
This paper compares three single-ended distributed amplifiers (DAs) realized in an in-house InP/InGaAs double heterojunction bipolar transistor technology featuring an f/sub t/ and f/sub max/ larger than 200 GHz. The amplifiers use five or eight gain cells with cascode configuration and emitter follower buffering. Although the technology is optimized for(More)
An 80 Gbit/s monolithically integrated clock and data recovery (CDR) circuit with 1:2 demultiplexer (DEMUX) is reported. The integrated circuit (IC) is manufactured using an InP double heterostructure bipolar transistor (DHBT) technology which features cut-off frequency values of more than 220 GHz for both f/sub T/ and f/sub max/. The CDR circuit is mainly(More)
1.3 - 1.55&#x003BC;m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 &#x003BC;m gate length AlGaAs/GaAs HEMT process. The In/sub 0.53/Ga/sub 0.47/As MSM and PIN photodiodes grown on GaAs have nearly identical characteristics to photodiodes grown on InP.