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This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20(More)
We demonstrate for the first time the embedded integration of a Radio Frequency Microelectromechanical Systems (RF-MEMS) capacitive switch for mm-wave integrated circuits in a BiCMOS Back-end-of-line (BEOL). The switch shows state-of-the-art performance parameters. The ¿off¿ to ¿on¿ capacitance ratio is 1:10 providing excellent isolation in the mm-wave(More)
We demonstrate a novel back-side processed, back to front self-aligned BiCMOS embedded RF-MEMS switch for the 90 to 140GHz frequency band. The switch integration is very simple, adding only one mask step to the underlying high-performance BiCMOS process. Moreover, it offers low cost, wafer level packaging. The insertion loss of the switch is less than 0.5dB(More)
In this letter, a 60 to 77 GHz switchable low-noise amplifier is presented. The IC is realized in a radio frequency microelectromechanical systems embedded 0.25 μm SiGe-C BiCMOS technology. Measured results show that the presented IC achieves good performance in both frequency bands in terms of gain, noise figure and power consumption. These results(More)
This paper presents the results of some W-band power detector and wideband (IF) amplifier circuit designs made in 0.25 &#x03BC;m and 0.13 &#x03BC;m SiGe BiCMOS processes. Two 0.25 &#x03BC;m SiGe wideband power detector and amplifier RFICs present an NEP =1-2 pW/Hz<sup>1/2</sup> at 85-101 GHz and s<sub>21</sub>=10-19 dB at 2-32 GHz, respectively. To the(More)
The introduction of radio frequency micro-electro-mechanical systems (RFMEMS) as a monolithic option into state-of-the-art Si/SiGe BiCMOS foundry processes has paved the way for single chip radio frequency microsystems at millimeter wave frequencies. Deep silicon substrate etch techniques have also been developed to prevent high substrate losses which help(More)
This paper presents a wafer level packaged (WLP) RF-MEMS switch fabricated in a 0.13 &#x03BC;m SiGe BiCMOS process technology for D-Band (110&#x2013;170 GHz) applications. For the wafer level packaging, thin film encapsulation approach is developed and used during the Back-End-of-Line (BEOL) fabrication process. The fabricated wafer level encapsulated (WLE)(More)
High Power handling capabilities are not the main focus in MEMS varactor research and development. In this paper MEMS varactors with excellent RF power handling capabilities of up to 16 V<sub>PP</sub> for application in low noise wideband RF VCOs (Voltage controlled oscillators) have been designed, fabricated and characterized. These MEMS varactors are(More)
Robustness and reliability of an embedded RF-MEMS switch are analyzed. Changes of key switch parameters, such as C<inf>OFF</inf>, C<inf>ON</inf>, and pull-in voltage, with the ambient temperature are investigated in the range of &#x2212;30&#x00B0;C to 150&#x00B0;C. The biggest temperature effect, a decrease by a factor of 2 between &#x2212;30&#x00B0;C and(More)
A highly sensitive 120 GHz integrated dielectric sensor in SiGe BiCMOS with back-side etching is presented. The sensor consists of a bandpass filter using a planar resonator, a 120 GHz VCO at the input, and a power detector at the output. The sensitivity of the stand-alone resonator and the sensor was tested by measuring the change in the detector output(More)