M. Kayambaki

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GaN is a wide-bandgap semiconductor with still unexplored capabilities for ultraviolet detection. To exploit GaN properties better for ultraviolet detection, a metal-semiconductor-metal-type photodetector structure was designed and manufactured on a 2.2 microm thin GaN membrane fabricated by micromachining techniques. As a result, a very low dark current(More)
This paper presents the manufacturing and the characterization of GaN membrane supported MSM photodetector structures obtained by means of nanolithographic techniques. Two different runs of MSM photodetectors, with different dimensions of the MSM structures and different GaN membrane thickness, have been performed and the detectors performances are(More)
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