M. H. Khater

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This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting(More)
This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz. f/sub MAX/ extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12/spl times/2.5 /spl mu/m/sup 2/ have these characteristics at a linear current of 1.0 mA//spl mu/m (8.3(More)
The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base high-performance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die(More)
FinFET integration challenges and solutions are discussed for the 22 nm node and beyond. Fin dimension scaling is presented and the importance of the sidewall image transfer (SIT) technique is addressed. Diamond-shaped epi growth for the raised source-drain (RSD) is proposed to improve parasitic resistance (R<inf>para</inf>) degraded by 3-D structure with(More)
This work reports on SiGe HBT technology with f/sub max/ and f/sub T/ of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f/sub max/ and f/sub T/ both of which exhibit 300 GHz and above. Associated BV/sub CEO/ and BV/sub CBO/ are measured to(More)
Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs, with simultaneously optimized f/sub T/ and f/sub max/ of >300 GHz, are developed. To the author's knowledge, this is the first report of f/sub T/ and f/sub max/ both exceeding 300 GHz for any Si-based transistor. BV/sub CEO/(More)
This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f/sub T/) of 510 GHz at 4.5 K was measured for a 0.12/spl times/1.0 /spl mu/m/sup 2/ SiGe HBT (352 GHz at 300 K) at a breakdown(More)
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f<sub>T</sub> and 360 GHz f<sub>MAX</sub> high performance SiGe HBTs, 135 GHz f<sub>T</sub> and 2.5V BV<sub>CEO</sub> medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and(More)
We demonstrate in a single chip a complete multiport photonic switching system using IBM 90-nm photonics-enabled CMOS. The system includes CMOS logic, switch drivers, multistage 4&#x00D7;4 and 8&#x00D7;8 photonic switch fabrics, and thermo-optic phase tuners.
A monolithically-integrated germanium receiver is fabricated in the IBM's newly established 90nm CMOS-integrated nanophotonics technology node. Technology is promising for cost-effective 10Gbps to 28Gbps optical communications links operating within extended temperature range up to 95&#x00B0;C.