M. G. Chandrasekhar

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On May 26, 2011 Mitsubishi Electric Corporation released its GaN HEMT power amplifier for C-band satellite communication, which offers a power-added efficiency (PAE) of 67%. Frequency and bias dependence of scattering parameters of microwave transistors can be successfully modeled by artificial neural networks (ANN). Dependence of angle of a scattering(More)
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