M Eridisoorya

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
A method is described for directly measuring the temperature of a substrate in a molecular-beam epitaxy (MBE) growth system. The approach relies on the establishment of the temperature dependence of Raman-active phonons of the substrate material using independently known calibration points across the range of interest. An unknown temperature in this range(More)
  • 1