M. D. Giles

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A 14nm logic technology using 2 nd-generation FinFET transistors with a novel subfin doping technique, self-aligned double patterning (SADP) for critical patterning layers, and air-gapped interconnects at performance-critical layers is described. The transistors feature rectangular fins with 8nm fin width and 42nm fin height, 4 th generation high-k metal(More)
For the first time, the performance impact of (110) silicon substrates on high-k + metal gate strained 45nm node NMOS and PMOS devices is presented. Record PMOS drive currents of 1.2 mA/um at 1.0V and 100nA/um Ioff are reported. It will be demonstrated that 2D short channel effects strongly mitigate the negative impact of (110) substrates on NMOS(More)
High-intensity interval training (HIIT) improves peak oxygen uptake (V̇O2peak) and oxygen uptake (V̇O2) kinetics, however, it is unknown whether an optimal intensity of HIIT exists for eliciting improvements in these measures of whole-body oxidative metabolism. The purpose of this study was to (i) investigate the effect of interval intensity on(More)
Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching High temperature finite-size effects in the magnetic properties of Ni nanowires Propagation of light in serially coupled plasmonic nanowire dimer: Geometry dependence and(More)
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