M. C. Boissy

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2014 The need for light sources and detectors in optical communications has stimulated the evaluation of physical properties of the GaAs1-xSbx/Ga1-yAlyAs1-xSbx double heterojunction. In this paper the research is limited to the composition range 0 ~ x ~ 0.25, which corresponds to the spectral range 0.9-1.2 03BCm, specially attractive for optical fiber(More)
2014 Using a time-resolved cathodoluminescence technique, we have investigated the radiative recombination in highly doped (Ga, Al)As epitaxial layers (the dopant was Si or Ge). We have realized in homogeneous Si-doped epitaxial (Ga, Al)As layers the conditions of large luminescence efficiency and great decay time usually observed in L.E.D. obtained by(More)
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