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This paper deals with the design, manufacture and test of a high efficiency power amplifier for L-band space borne applications. The circuit operates with a single 36 mm gate periphery GaN HEMT power bar die allowing both improved integration and performance as compared with standard HPA design in a similar RF power range. A huge effort dedicated to the(More)
We present a new packaging solution for GaN power electronics for efficient heat extraction needed for high power devices. The benefits of using silver diamond composite as base plate in packages for GaN power bars is demonstrated. A dramatic improvement in thermal management (as high as ~50%) was obtained with respect to the existing packaging technologies(More)
This paper deals with the development of a 120W AlGaN/GaN power bar model starting from the modeling of the elementary cell of the device. The approach consists in coupling a distributed thermal model of the power bar to each electro-thermal model of the elementary cells which constitute the power bar. The distributed nature of the temperature is taken into(More)
A novel packaging solution for GaN power electronics for efficient heat extraction in high power devices is presented. The benefits of using silver diamond composites as base plate in packages for GaN power bars are demonstrated. Micro-Raman thermography measurements were carried out to probe the device temperature for devices mounted on different base(More)
This paper describes the influence of different base plate materials on the electrical behavior of a RF GaN power device. Three different materials are tested and measured, first with a smaller device, then with a 36mm gate periphery AlGaN/GaN HEMT on SiC device, with an output power of 130W at L-band. The influence of the thermal conductance of each base(More)
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