M. Agostinelli

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A 14nm logic technology using 2 nd-generation FinFET transistors with a novel subfin doping technique, self-aligned double patterning (SADP) for critical patterning layers, and air-gapped interconnects at performance-critical layers is described. The transistors feature rectangular fins with 8nm fin width and 42nm fin height, 4 th generation high-k metal(More)
The impact of silicon technology scaling trends and the associated technological innovations on RF CMOS device characteristics are examined. The application of novel strained silicon and high-k/metal gate technologies not only benefits digital systems , but significantly improves RF performance. The peak cutoff frequency (f T) doubles from 209 GHz in the 90(More)
Benign Epilepsy with centrotemporal spikes (BECTS) is considered a benign type of epilepsy; nevertheless a significant number of children present clear and heterogeneous cognitive deficits such as memory disturbances. Thus far, evidence about memory impairment has been less than conclusive. To clarify the quality of memory functioning in BECTS children, an(More)
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