M. A. Sprokel

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The punch-through and turn-on mechanism of a compensated MOSFET are analyzed and compared with measured subthreshold characteristics. On this basis it is argued that the approach for scaling down p-channel MOSFETs in CMOS-VLSI is different from that of n-channel devices. Satisfactory operation of 0.5 µm devices is demonstrated.
As feature sizes become smaller than 2 μm, and also contact sizes cross this limit, the resistance and reliability of AlSi to Si contacts are limited by silicon recrystallization from the AlSi into the contacts. This problem, often referred to as Si Solid Phase Epitaxy, Si-SPE, can be both a yield limiter and a reliability hazard. This can be(More)
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