M. A. Moghimi

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Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Geometry optimizations were carried out at the B3LYP/6-31G* level of theory using a locally modified(More)
We have analyzed the effect of external electric field on the zigzag (6,0) single-wall BC2N nanotube using density functional theory calculations. Analysis of the structural parameters indicates that the nanotube is resistant against the external electric field strengths. Analysis of the electronic structure of the nanotube indicates that the applied(More)
Diffuse reflectance spectroscopy (DRS) can be used as a rapid and sensitive method for the quantitative determination of low amounts of aluminum. In this analytical technique, the analyte in samples are extracted onto a solid sorbent matrix loaded with a colorimetric reagent and then quantified directly on the adsorbent surface. Alternatively, colored(More)
Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic(More)
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