M.A. Khatibzadeh

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The millimeter-wave power performance of a 75- mu m*0.3- mu m InP MISFET with SiO/sub 2/ insulator is presented. The combination of high intrinsic transconductance (120 mS/mm), current density (1 A/mm), and gate-source and gate-drain breakdown voltages (35 V) led to a record power density of 1.8 W/mm and 20% power-added efficiency at 30 GHz. This power(More)
Speakers: A. Nirmalathas, University of Melbourne, Australia “Fiber-Wireless Networks: Recent Progress in Technologies and Architectures” K. Kitayama, Osaka University, Japan “Millimeter-wave Radio-on-fiber System: Dense WDM and Photonic Conversions” T. Nagatsuma, NTT, Japan “Over-100-GHz millimeter-wave technologies for 10-Gbit/s wireless link” Tibor(More)
The noise and RF performance of recessed-gate GaAs ion-implanted MESFETs as a function of various doping profiles has been theoretically investigated. The effects of implant energy and dose as well as varying deep-level concentration are included. Degradation of device performance with increasing deep-level concentration is predicted and the responsible(More)
The noise and RF performance of recessed-gate GaAs ion-implanted MESFET's as a function of various doping profiles has been theoretically investigated. The effects of implant energy and dose as well as varying deep-level concentration are included, Degradation of device performance with increasing deep-level concentration is predicted and the responsible(More)
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