M. A. Exarchos

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This paper investigates both theoretically and experimentally the dielectric charging effects of capacitive RF microelectromechanical system switches with silicon nitride as dielectric layer. Dielectric charging caused by charge injection under voltage stress was observed. The amphoteric nature of traps and its effect on the switch operation were confirmed(More)
In this paper we have investigated the temperature dependence of the charging effects in Metal-Insulator-Metal structures, aiming to obtain a better insight on the charging mechanism of RF-MEMS switch insulating layer. The accumulated charge kinetics have been monitored through the transient response of the depolarization current. The transient response is(More)
SLS ELA polysilicon TFTs fabricated in films crystallized with several novel techniques, yielding different film microstructure and texture, were investigated. The parameter statistics indicate that the TFT performance depends on film quality and asperities, in conjunction with the grain boundary trap density. The drain current transients, upon TFT switch(More)
The paper presents the investigation of the temperature dependence of the charging mechanism in RFMEMS switch insulating layer. The accumulated charge kinetics have been monitored through the transient response of the device capacitance. The transient response is shown to follow rather a stretched exponential law than an exponential one. The time scale of(More)