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Based upon a unique junction pseudomorphic high electron-mobility transistor (J-pHEMT) device, a novel method of providing high-efficiency power amplifier (PA) power control for variable envelope modulation schemes is demonstrated for enhanced data rates for global system for mobile communications evolution and wide-band code division multiple access. This(More)
The system specifications of RF energy harvesting are outlined, indicating the general guideline of low power circuit and system design as well as the frequency set to be used in the system. Four frequency bands representing five wireless standards were chosen namely, GSM, DTV, Wi-Fi, Bluetooth and road tolling system. A harvesting system has been designed(More)
in integrated circuits implemented to attain high value resistance. Incremental resistance for both non-tunable, tunable pseudo-resistor has been estimated in Cadence Analog Design Environment using 0. 18?m technology. Pseudo-resistors make use of diode-connected MOS devices working in subthreshold region and consume less area as compared to the discrete(More)
In this paper we present an optimised design of diodes for operation in energy harvesting cells. The work was based on analysing which of the diode extended model mostly affected the conversion efficiency of the rectifier. A physical device model was then constructed, modelled and optimised to reduce dissipated energy through the rectifier.
This paper presents a physical model and experimental validation for the breakdown process in HEMTs and MESFETs. The model is integrated into a fast quasi-two-dimensional physical simulation. The model takes account of the tunnelling effects in the region of the gate metallization. A new thermal model monitors the channel temperature and controls the(More)
A frequency reconfigurable LNA is designed using novel tunable RF-MEMS varactors. The designed MEMS varactor can be fabricated and integrated in 0.35μm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC). The frequency of operation of the LNA varies from 2.7 GHz to 3.1 GHz by tuning the capacitance of the MEMS varactor. The MEMS(More)