Lukas Czornomaz

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We report on the first demonstration of the CMOS-compatible integration of high-quality InGaAs on insulator (InGaAs-OI) on Si substrates by a novel concept named Confined Epitaxial Lateral Overgrowth(More)
We report CMOS-compatible n-channel InGaAson-insulator FinFETs obtained using a replacement metal gate fabrication flow. The fabricated devices feature 12-nm-thick SiN<sub>x</sub> spacers, a scaled(More)