Luiz H. Spiller

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Lateral diffusion m Junction depth m Low-field mobilitv cm2/Vs Abstract SIGMA Adequate and understandable MOSFET models are presently a must for the design of integrated circuits. Most of the existing MOSFET models, however, are too complex andor do not comply with basic principles of physics. We propose here the use of ACM model, a very simple transistor(More)
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