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In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical(More)
We review our recent work on modeling of low current filamentary switching in amorphous HfO<sub>2</sub> RRAM. The conduction is controlled by the width of the constriction, determining the electron transmission. The set and reset processes are modeled as a dynamic flow between two oxygen vacancy reservoirs connected by a narrow constriction. Reset is(More)
During programming of a phase-change memory cell, the material is locally heated up to high temperatures (&gt;600degC), to induce phase transitions as crystallization (SET) or amorphization by quenched cooling (RESET). In this work, the thermo-mechanical stresses induced in a line-type phase-change memory cell were examined using(More)
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