Loukas Michalas

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Keywords: RF MEMS capacitive switch Dielectric charging Silicon nitride PECVD method a b s t r a c t The present paper aims to provide a better insight to the electrical characteristics of silicon nitride films that have been deposited with PECVD method under different conditions. The effect of film thickness, substrate temperature and the frequency that(More)
The paper investigates the dielectric charging in nanostructured materials already used or potential candidate for insulating films in MEMS capacitive switches. The investigation takes into account the percolation transport through grain boundaries in polycrystalline materials as well as trough nanoparticles, such as carbon nanotubes that are introduced to(More)
0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.06.005 ⇑ Corresponding author. Tel.: +30 210 727 6722; fa E-mail address: mkoutsoureli@phys.uoa.gr (M. Ko Kelvin probe method has been directly applied to capacitive MEMS switches in order to investigate temperature activated mechanisms in PECVD Silicon Nitride(More)
A study of field emission process in MEMS-based capacitor/switch-like geometries is presented. High resolution current–voltage characteristics up to breakdown have been obtained across micro-gaps in fixed– fixed Metal–Air–Metal and Metal–Air–Insulator–Metal structures. In metallic devices the I–V dependence reveals Fowler–Nordheim theory effects. In the(More)