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Journals and Conferences
An up-diffused form of symmetrical cell Integrated Injection Logic (I2L) has been designed, modeled, fabricated, and demonstrated to be fully operating after 6 × 1014 neutrons/cm2. This technology is expected also to be capable of full operation after > 3 × 106 Rad(Si) ionizing radiation and immune to information upset at levels above 1 × 1010 Rad(Si)/s… (More)
A significant degree of radiation hardness has been achieved for I2L devices using symmetrical cell topologies. MSI complexity functions have been implemented with no degradation in device hardness from individual gate performance. Short pulse upset thresholds of 2×1010 Rad (Si)/sec and 1x1014 neutrons/cm2 fluence immunity have been demonstrated.
The variation in current density of Integrated Injection Logic (I2L) as a function of neutron or gamma irradiation was evaluated. The results confirm the previous theoretical predictions in all respects. These results can now be used as a tool for improving radiation-hardened I2L cell designs and to verify analytical predictions.