Louis D. Lanzerotti

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Foundation of rf CMOS and SiGe BiCMOS technologies This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal(More)
  • Governing Board, Louis Lanzerotti, Anthony Atchley, Lila M Adair, David E Aspnes, Arthur Bienenstock +42 others
  • 2008
" TRACTRICIOUS " As we gear up for the 2008 Congress at FermiLab (and its eye-catching art such as the piece known as " Tractricious "), you might be wondering what became of the 10 r e c o m m e n-dations from the participants in the workshops at the 2004 Congress in Albuquerque, NM (and its h i s t o r i c Trinity site where the first A-bomb was tested).(More)
Key Points: • We report initial observations of ring current ions • We show that He-ion decay rates are consistent with theory • We show that O-ions with energies greater than 500 keV decay very rapidly (2014), Initial measurements of O-ion and He-ion decay rates observed from the Van Allen Probes RBSPICE instrument, J. Geophys. This is an open access(More)
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