Lorenzo Fallarino

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Magnetic field induced switching of the antiferromagnetic order parameter in thin films of magnetoelectric chromia" (2015). A Landau-theoretical approach is utilized to model the magnetic field induced reversal of the antiferromagnetic order parameter in thin films of magnetoelectric antiferromagnets. A key ingredient of this peculiar switching phenomenon(More)
Graphene has been predicted to develop a magnetic moment by proximity effect when placed on a ferromagnetic film, a promise that could open exciting possibilities in the fields of spintronics and magnetic data recording. In this work, the interplay between the magnetoresistance of graphene and the magnetization of an underlying ferromagnetic insulating film(More)
L. E. Hueso and co-workers observe magnetic field lines (as imaged by electron holography) arising from a ferromagnetic insulating substrate which crosses a graphene device. On page 6295, they show how the changes in the weak localisation of the graphene are created by the magnetic domain distribution and cannot be attributed to other more exotic effects,(More)
Boundary magnetization properties of epitaxial Cr2−xAlxO3 thin films" The magnetoelectric antiferromagnet α-Cr 2 O 3 (chromia) is known to possess a roughness insensitive net equilibrium magnetization at the (0001) surface, called boundary magnetization (BM), which is coupled to the bulk antiferromagnetic order parameter. In order to verify whether this(More)
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