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Motivated by problems arising in semiconductor-device modeling, this paper is concerned with a singularly perturbed semilinear reaction-diffusion problem with a boundary turning point. It is proved that the problem has a unique solution with two boundary layers. Based on the estimates of the derivatives of the solution, a numerical method is proposed which(More)
We consider a spline difference scheme on a piecewise uniform Shishkin mesh for a singularly perturbed boundary value problem with two parameters. We show that the discrete minimum principle holds for a suitably chosen collocation points. Furthermore, bounds on the discrete counterparts of the layer functions are given. Numerical results indicate uniform(More)
The linear singularly perturbed reaction-diffusion problem is considered. The spline difference scheme on the Shishkin mesh is used to solve the problem numerically. With the special position of collocation points, the obtained scheme satisfies the discrete minimum principle. Numerical experiments which confirm theoretical results are presented.