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A thermal atomic layer deposition (ALD) process with tetrakis(dimethylamino) titanium and H2O as reagents has been used to deposit TiO2 films on native oxide and etched InAs(100) surfaces at 200 °C. TiO2 was deposited on etched InAs(100) surface without the formation of undesirable interfacial layers. X-ray photoelectron spectroscopy (XPS) data on a series(More)
Ta2O5 films were deposited on GaAs(100) surfaces using thermal atomic layer deposition from pentakis dimethyl amino tantalum (PDMAT) and H2O. The interface between the films and native oxide covered GaAs surfaces has been examined using X-ray photoelectron spectroscopy as a function of film thickness and for deposition temperatures ranging from 200 to 350(More)
Four coordinated complexes MnxNi(1−x)(C2H6N2O)6SO4 (x=0, 0.33, 0.75, 0.90) were synthesized and characterized. Single-crystal X-ray analysis revealed that the complexes belong to the trigonal crystal family, R-3c space group. Spiral and terraced nucleus growth modes were observed by atomic force microscopy (AFM) in the crystals. Thermogravimetric analysis(More)
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