Lior Kornblum

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Disparities between the predicted and the measured effective work functions (EWFs) in advanced metal oxide semiconductor devices, or Fermi-level pinning (FLP), have gained significant attention when high-k dielectrics began to emerge. Using a systematic approach for EWF extraction, combined with a comparison to unpinned SiO2 references, it was found that no(More)
Thin dielectric layers are a prominent route to control the band alignments and effective work function of metal oxide semiconductor (MOS) devices. In this work, the electrostatic effects of thin Ta2O5 layers on the band alignments of MOS devices are examined. A detailed analysis of the physical properties of a thick ( 6 nm) Ta2O5 layer is reported. No(More)
as channels on (001) Si Lior Kornblum, Eric N. Jin, Omor Shoron, Mohamed Boucherit, Siddharth Rajan, Charles H. Ahn, and Fred J. Walker Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA Department of Electrical and Computer Engineering, The Ohio State University,(More)
Lior Kornblum, Eric N. Jin, Divine P. Kumah, Alexis T. Ernst, Christine C. Broadbridge, Charles H. Ahn, and Fred J. Walker Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06511, USA Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA Department of Physics, Southern Connecticut(More)
We have demonstrated that MAD-Al<inf>2</inf>O<inf>3</inf> is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250C retention, which we believe is exceptional(More)
We demonstrate an oxide-stabilized III–V photoelectrode architecture for solar fuel production from water in neutral pH. For this tunable architecture we demonstrate 100% Faradaic efficiency for hydrogen evolution, and incident photon-to-current efficiencies (IPCE) exceeding 50%. High IPCE for hydrogen evolution is a consequence of the low-loss interface(More)
Hf-Ni alloys are studied as a gate electrode for metal-oxide-semiconductor devices. The Hf-Ni solid-state amorphization couple encompasses several metallurgical phenomena which are investigated at the nanoscale and are correlated with the macroscopic electrical properties of devices. The dependence of the Fermi level position on the alloy composition is(More)
We report the properties of a MANAS (Metal/Al<sub>2</sub>O<sub>3</sub>/Nitride/Al<sub>2</sub>O<sub>3</sub>/Si) charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality Al<sub>2</sub>O<sub>3</sub> deposited by the molecular-atomic-deposition (MAD) technique. Compared with state-of-the-art MANOS(More)
The work function (WF) of several phases of Pt-Al alloys is investigated. A first-principles study is performed to determine the dependence of the vacuum WF (VWF) on the phase, crystallographic orientation, and atomic termination. In parallel, the effective WF (EWF) of these alloys is experimentally measured using metal-oxide semiconductor devices. A(More)