Lionel Buchaillot

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This paper presents a microgripper using an amplification mechanism coupled to an electrostatic linear motor. The gripper design, particularly the principle of the amplification mechanism based on the combination of ground-links and moving pin-joints, is explained. The linear motor is composed of scratch drive actuator inducing the use of electrostatic(More)
16MHz and 91MHz micromechanical resonators based on the Resonant Suspended-gate MOSFET (RSG-MOSFET) architecture are demonstrated. A fabrication process using a polysilicon sacrificial layer and an aluminum-silicon alloy (AlSi 1%) suspended-gate was developed. Static and dynamic electrical characteristics of the Clamped-Clamped beam (CC-beam) resonator have(More)
A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 μm, w = 165 nm, and h = 400 nm) with 120-nm gaps. This letter details the design and process flow fabrication steps. Then, the(More)
In this paper, top-down and bottom-up approaches are used to predict material properties of group III-nitride nanostructures. The first approach calculates the melting temperature, melting enthalpy, Debye temperature and energy bandgap of InN, GaN and AlN through classical thermodynamics. The second approach calculates the surface energies in the liquid and(More)
The very significant growth of the wireless communication industry has spawned tremendous interest in the development of high performances radio frequencies (RF) components. Micro Electro Mechanical Systems (MEMS) are good candidates to allow reconfigurable RF functions such as filters, oscillators or antennas. This paper will focus on the MEMS(More)
In this paper, we have investigated the size and shape effects on creep and diffusion phenomena at the nanoscale. From a classical thermodynamic model, the higher diffusion of nanostructures is explained. As creep is particularly due to diffusion processes, it is therefore important to consider it at the nanoscale. Therefore, to be able to control creep in(More)