Lien-Tai Kuo

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In this paper, electrical and physical characteristics of the addition of Ti into Ce<sub>2</sub>O<sub>3</sub> dielectric films on the single crystalline silicon were studied. It can be found that the high-k Ce<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> gate dielectrics with post rapid thermal annealing (RTA) can show higher dielectric constant, smaller gate(More)
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