Lev M. Sambursky

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An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies(More)
SPICE modeling of SOI/SOS MOSFETs with account for static (total dose) and dynamic (heavy ions and transient ionizing radiation) radiation-induced effects including SPICE models, model parameter(More)
Through the analysis of JFET models with account for temperature effects, the most suitable one was selected as a basis for expanding SPICE modeling possibilities to cryogenic-to-high temperature(More)
In this work features of measurement, processing and analysis of electrical characteristics of MOSFET's subjected to various kinds of static irradiation (neutron, electron, and y-rays) and(More)