Lev M. Sambursky

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—Universal SPICE model for submicron SOI/SOS MOSFETs based on BSIMSOI and EKV-SOI platforms with account for total ionizing dose-induced effects (TID), pulsed radiation effects, single events is presented. A special subcircuit consisting of parasitic transistors for sidewall and backgate leakage currents and other elements is connected to the standard SPICE(More)
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