Leonard Franklin Register

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To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using high-κ oxides, respectively. The goal of this work is(More)
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with(More)
A simulation tool for modeling superfluid quantum transport in the proposed Bilayer Psuedo-spin Field Effect Transistor (BiSFET) and related systems is described and demonstrated. An interlayer Fock exchange interaction is incorporated into a π-orbital based atomistic tight-binding model of transport in two graphene layers separated by a tunnel(More)
We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of(More)
We study the effects of insulating oxides in their crystalline forms on the energy band structure of monolayer and bilayer graphene using a first principles density functional theory based electronic structure method and a local density approximation. We consider the dielectric oxides SiO(2) (α-quartz) and Al(2)O(3) (alumina or α-sapphire), each with two(More)
To my wife, my parents and grandparents Acknowledgement First of all, I would like to thank my supervisors and my role models, Drs. Sanjay K. Banerjee and Al F. Tasch for their invaluable guidance and support throughout my four-year Ph.D. study. Many thanks to Drs. for taking their time to serve on my committee, and for their comments and help. Many thanks(More)
Interlayer tunnel field-effect transistors based on graphene and hexagonal boron nitride (hBN) have recently attracted much interest for their potential as beyond-CMOS devices. Using a recently developed method for fabricating rotationally aligned two-dimensional heterostructures, we show experimental results for devices with varying thicknesses and(More)