Leonard Franklin Register

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We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with(More)
We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of(More)
A simulation tool for modeling superfluid quantum transport in the proposed Bilayer Psuedo-spin Field Effect Transistor (BiSFET) and related systems is described and demonstrated. An interlayer Fock exchange interaction is incorporated into a π-orbital based atomistic tight-binding model of transport in two graphene layers separated by a tunnel(More)
We model and simulate the resonant tunneling and I-V characteristics of Interlayer Tunneling Field-Effect Transistors (ITFETs) based on transition metal dichalcogenide monolayers, MoS<sub>2</sub> layers here, using quantum transport simulations with a full-band model. Gate-controllable resonant peaks are demonstrated and the short channel effects on(More)
We simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a monolayer-graphene/hBN/monolayer-graphene system. Through use of density functional theory (DFT) methods, we demonstrate a reduction in tunneling current due to weakened coupling across the rotationally misaligned interfaces between the channel(More)
FinFET geometries have been developed for the sub-22 nm regime to extend Si-CMOS scaling via improved electrostatics compared to planar technology. Moreover, engineers have incorporated high-k oxide gate stacks. Beyond leakage current, less discussed is the impact of the gate oxide's complex band structure on the device performance. However, it defines the(More)
Significant roadblocks to the widespread use of monolayer transition metal dichalcogenides for CMOS-logic applications are the large contact resistance and absence of reliable doping techniques. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. Here, we study substitutional doping of, and various metal(More)
We model equilibrium properties of possible room-temperature electron-hole exciton condensates formed between two dielectrically separated transition metal dichalcogenide (TMD) layers, MoS<sub>2</sub> layers here, toward application to novel beyond CMOS devices. Our simulation method employs an interlayer Fock exchange interaction incorporated into an(More)