Leon Ungier

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In this letter, we report the fabrication and performance of a novel, high gain photodetector. Basically, the device is a modulation-doped field effect transistor (MODFET) structure with its channel region made of low-temperature MBE-grown GaAs. It exhibits an excellent responsivity of 65 A/W at /spl sim/0.87 /spl mu/m and 6.5 A/W at /spl perp/1.0 /spl(More)
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