Leng-Seow Tan

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We report a novel surface passivation technology employing a silane-ammonia gas mixture to realize very high quality high-k gate dielectric on GaAs. This technology eliminates the poor quality native(More)
We report the first demonstration of a surface channel inversiontype In<inf>0.53</inf>Ga<inf>0.47</inf>As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D(More)
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