- Full text PDF available (0)
- This year (0)
- Last 5 years (2)
- Last 10 years (3)
Journals and Conferences
Frequency doubling of a tunable continuous wave CO<inf>2</inf> laser in orientation-patterned GaAs is demonstrated. For 1.8 W incident power at 9.29 μm, 1.9 mW of second harmonic power was obtained from a 4 cm long crystal.
Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-phasematched layer thicknesses exceeding 400 microns.
Tunable, mid-infrared radiation was obtained by frequency doubling of a continuous-wave CO(2) laser in orientation-patterned GaAs crystal. Active cooling of the crystal minimized pump-induced thermal effects, allowing generation of output powers exceeding 300 mW across the wavelength range of 4.63-4.78 μm.