Lee Mohnkern

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Tunable, mid-infrared radiation was obtained by frequency doubling of a continuous-wave CO(2) laser in orientation-patterned GaAs crystal. Active cooling of the crystal minimized pump-induced thermal effects, allowing generation of output powers exceeding 300 mW across the wavelength range of 4.63-4.78 μm.
Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-phasematched layer thicknesses exceeding 400 microns.
Frequency doubling of a tunable continuous wave CO<inf>2</inf> laser in orientation-patterned GaAs is demonstrated. For 1.8 W incident power at 9.29 &#x03BC;m, 1.9 mW of second harmonic power was obtained from a 4 cm long crystal.
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