Laurent Clavelier

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P. Batude, M. Vinet, B. Previtali, C. Tabone, C. Xu, J. Mazurier, O. Weber, F. Andrieu, L. Tosti, L.Brevard, B. Sklenard, P. Coudrain, S. Bobba, H. Ben Jamaa, P-E. Gaillardon, A. Pouydebasque, O. Thomas, C. Le Royer, J.-M. Hartmann, L. Sanchez, L. Baud, V. Carron, L. Clavelier, G. De Micheli, S. Deleonibus, O. Faynot and T. Poiroux. CEAleti, Minatec Campus,(More)
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (V<sub>TH</sub>) control. A sequential process flow is proposed to fabricate 3D devices with dynamically tunable V<sub>TH</sub>. This ability can be exploited to design SRAMs cells with(More)
This paper presents several key technologies developed for high density 3D integration by circuit stacking, i.e. with an inter-strata connection pitch lower than 10 mum. Direct bonding technology, die-to-wafer self-assembly, wafer thinning process and copper TSV process are discussed. 2 mum to 5 mum large copper TSV chains are presented with a TSV(More)
This paper will focus on recent results of Cu-Cu nonthermo compression bonding for wafer-to-wafer 3D stacking. We report on bonding quality, wafer-to-wafer alignment accuracy and electrical connectivity. Specific pre-bonding surface conditioning is necessary to insure high bonding quality of patterned Cu wafers. A particular concern is related to the(More)
Flip chip is a high-density and highly reliable interconnec-<lb>tion technology which is mandatory for the fabrication of high<lb>end heterogeneous imaging arrays. The control of ultra-fine<lb>pitch (<10 μm) and high bumps count flip-chip bonding tech-<lb>nology represents a challenge on the roadmap of next gene-<lb>ration devices [1].<lb>This paper(More)
Since the end of the last millenium, the microelectronics industry is facing new issues as far as CMOS devices scaling is concerned. Linear scaling will be possible in the future if new materials are introduced in CMOS devices structure or if new devices architectures are implemented. The demand for low voltage, low power and high performance are the great(More)
The dynamics of domains stability of a 120-nm-thick Z-cut single-crystal LiTaO<inf>3</inf> thin film obtained through the Smart Cut&#x2122; technology is investigated using Piezoresponse Force Microscopy. The artificially created &#x2212;Z domains were found to completely relax, driven by the large built-in field observed in the structure. A constant domain(More)
Germanium MOSFET is considered as a promising alternative to silicon due to its intrinsically higher carrier mobility, especially for holes. Using appropriate channel and pocket implants, this paper presents for the first time well-behaved short channel devices characteristics featuring a negative V<sub>th</sub> and no parasitic conduction at the BOx(More)
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