Laurent Cario

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A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model(More)
V. Guiot, L. Cario, ∗ E. Janod, B. Corraze, V. Ta Phuoc, M. Rozenberg, P. Stoliar, T. Cren, and D. Roditchev Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France GREMAN, CNRS UMR 7347 Université F.Rabelais. UFR Sciences Parc de Grandmont. 37200 ToursFrance Laboratoire de Physique des(More)
The purpose of this study was to control the fabrication of new labile supramolecular assemblies by formulating associations of DNA molecules with inorganic layered double hydroxides (LDHs). The results show that LDH/DNA hybrids synthesized by a coprecipitation route involving the in situ formation of LDHs around DNA molecules acting as templates were(More)
We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (STM/STS). Moreover, we show that local electronic transitions(More)
The nature of the Mott transition in the absence of any symmetry breaking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa(4)Se(8), as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of(More)
Experimental evidence of a nonvolatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4 Se8 is reported. Scanning tunneling microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer-scale electronic phase separation generated in(More)
The lacunar spinel compounds GaTi(4-x)V(x)S(8) (0 < x < 4), consisting of Ti(4-x)V(x) tetrahedral clusters, were prepared and their structures were determined by powder X-ray diffraction. The electronic structures of GaTi(4-x)V(x)S(8) (x = 0, 1, 2, 3) were examined by density functional calculations, and the electrical resistivity and magnetic(More)
Scanning tunneling microscopy and spectroscopy measurements in the superconducting dichalcogenide 2H-NbS2 show a peculiar superconducting density of states with two well-defined features at 0.97 and 0.53 meV, located, respectively, above and below the value for the superconducting gap expected from the single band s-wave BCS model (Delta=1.76k_(B)T_(c)=0.9(More)
To improve the performances of p-Dye Sensitized Solar Cell (p-DSSC) for the future, the synthesis of modified p-type nickel oxide semiconductor, commonly used as photocathode in such devices, was initiated with Ni3O2(OH)4 as precursor. This specific nickel oxyhydroxide was first characterized by X-ray photo-electron spectroscopy and magnetic susceptibility(More)