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The distribution of recombination centers induced in Si epi-substrates by helium (He) implantation is obtained for the first time by direct measurement of local recombination lifetime profile along… (More)
Abstract Recent studies suggest that lattice damage induced by helium or proton ion implantation can be used to control the electrical behavior of bipolar semiconductor devices, such damage directly… (More)
In this paper, a study of the effects on both lifetime and resistivity, induced by helium implantation processes, is presented. A wide range of implantation energies (from 3.5 MeV to 5.8 MeV) and… (More)
In this work we present an experimental study on the effects of helium implantation in silicon. Doses in the range 1 times 1010 - 5 times 1011 atoms/cm2 have been analysed. Results show that,… (More)
L'invention concerne un dispositif en carbure de silicium comprenant au moins une electrode situee sur une surface de celui-ci, un contact apte au brasage forme sur cette electrode et au moins une… (More)