Laszlo Hollan

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More than 1 W att output power has been achieved at 10 GHz with GaAs MESFETs which are produced using a self-alignment technique. Principal improvements in performances are due to an increased maximum operating voltage of the Schottky diodes. This is obtained with a graded doping profile and there is in addition an improved linearity of the MESFET's. A(More)
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