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The new CoolMOS C3 generation combines extremely high on-state conductivity with ultrafast switching speed at full pulse current capability. In the first generation of CoolMOS the saturation current was intentionally reduced at the cell level for the benefit of short-circuit ruggedness. This technique results in a reduced current capability of the device at(More)
The paper presents a comparison of the latest device concepts like the super junction MOSFET, the IGBT and the actual trends in SiC devices. All these devices are capable of blocking voltages in the range of 1000 V, and optimized for different fields of applications. Silicon carbide switching devices exhibit superior properties compared to silicon devices.(More)
Residues from the fermentation of cellulose by the anaerobic bacteria Ruminococcus albus (strain 7) or Ruminococcus flavefaciens (strains FD-1 or B34b) containing residual cellulose, bacterial cells and their associated adhesins, were examined for their ability to serve as components of adhesives for plywood fabrication. The residues contained differing(More)
Considerable and ongoing effort is made to identify promising scalar field candidates in string theory to drive a cosmological period of inflation. At stake is the possibility that fundamental string parameters could be encoded in observables such as the CMB perturbation spectrum. In this contribution, we hold a concrete model of string inflation (KKLMMT)(More)
The new CoolMOS/sup TM/ C3 generation combines extremely high on-state conductivity with ultra fast switching speed at full pulse current capability. In the first generation of CoolMOS/sup TM/, due to the small chip size, one had a reduction of the saturation current at the cell level. This technique results in a reduced current capability of the device at(More)
By a vertical shrink of the nonpunchthrough insulated gate bipolar transistor (NPT IGBT) to a structure with a thin n-base and a low-doped field stop layer a new IGBT can be realized with drastically reduced overall losses. In particular, the combination of the field stop concept with the trench transistor cell results in an almost ideal carrier(More)
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