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High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
In this letter, we report on high-performance depletion/enhancement-mode β-Ga<sub>2</sub>O<sub>3</sub> on insulator (GOOI) field-effect transistors (FETs) with record high drain currentsExpand
  • 124
  • 6
  • Open Access
Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping techniqueExpand
  • 334
  • 4
  • Open Access
Lysophosphatidic acid opens a Ca(++) channel in human erythrocytes.
Lysophosphatidic acid (LPA) is a lipid-derived second messenger that mobilizes many cells of the circulatory and vascular systems to assist in thrombus development and wound healing. LPA, however,Expand
  • 73
  • 2
Surface chemistry of black phosphorus under a controlled oxidative environment.
  • Wei Luo, D. Zemlyanov, +4 authors P. Ye
  • Medicine, Materials Science
  • Nanotechnology
  • 23 September 2016
Black phosphorus (BP), the bulk counterpart of monolayer phosphorene, is a relatively stable phosphorus allotrope at room temperature. However, monolayer phosphorene and ultra-thin BP layers degradeExpand
  • 54
  • 1
  • Open Access
High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)
  • L. Yang, K. Majumdar, +8 authors P. Ye
  • Physics, Engineering
  • Symposium on VLSI Technology (VLSI-Technology…
  • 9 June 2014
In this paper, we report a novel chemical doping technique to reduce the contact resistance (R<sub>c</sub>) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (namely,Expand
  • 41
  • 1
  • Open Access
Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as theExpand
  • 38
  • 1
  • Open Access
Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an initial period of 18 h,Expand
  • 35
  • 1
  • Open Access
Physical understanding of graphene/metal hetero-contacts to enhance MoS2 field-effect transistors performance
Semiconducting transition metal dichalcogenide (TMD) is a promising two-dimensional material with a potential for next-generation nanoelectronic applications [1-3]. One of the most studied TMDExpand
  • 3
  • 1
${\rm MoS}_{2}$ Field-Effect Transistors With Graphene/Metal Heterocontacts
For the first time, n-type few-layer MoS2 field-effect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate lengthExpand
  • 92
  • Open Access