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Cellulose long fibers fabricated from cellulose nanofibers and its strong and tough characteristics
TLDR
The results indicate that strong and tough cellulose long fiber can be produced by using ionic crosslinking, controlling spinning speed, stretching and drying.
Physical and bio-composite properties of nanocrystalline cellulose from wood, cotton linters, cattail, and red algae
Nanocrystalline celluloses (NCCs) were isolated from different cellulose sources such as wood (softwood and hardwood), non-wood plant (cotton linters and cattail), and marine pulp (red algae) by acid
MOLECULAR CHARACTERIZATION OF TOMATO LEAF CURL HAINAN VIRUS AND TOMATO LEAF CURL HANOI VIRUS IN VIETNAM
TLDR
The virus was named Tomato leaf curl Hanoi virus (ToLCHanV), which has apparently emerged through recombination with Papaya leaf curl China viru s (PaLCuCNV) and Ageratum leaf curl virus (ALCV).
Downsizing and memory array integration of Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors
First, fabrication and characterization of a NAND flash memory using novel memory cells of ferroelectric-gate field-effect transistors (FeFETs), which is named Fe-NAND, was reviewed. A 64 kb Fe-NAND
Novel superhydrophobic cellulose coating and its multifunctional applications
Recently, an increasing trend has been noticed towards synthesizing superhydrophobic surface with a water contact angle (WCA) higher than 150° due to its many potential applications including water
Chitosan Nanofiber and Cellulose Nanofiber Blended Composite Applicable for Active Food Packaging
TLDR
It is the first time that a simple combination of ChNF–CNF composites fabrication showed good mechanical properties and antioxidant activities, and the ChNF-CNF composite is promising for active food packaging application.
Fabrication and characterization of sub-0.6-µm ferroelectric-gate field-effect transistors
Sub-micron-gate Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors (FeFETs) were successfully fabricated using electron-beam lithography, metal hard mask technique and dry etching.
Novel process for widening memory window of sub-200 nm ferroelectric-gate field-effect transistor by ferroelectric coating the gate-stack sidewall
Ferroelectric-gate field-effect transistors (FeFETs) with metallurgical-gate lengths of 140 nm, 160 nm and 190 nm were successfully fabricated using a novel fabrication process. The gate stacks of
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