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Third-generation infrared photodetector arrays
Hitherto, two distinct families of multielement detector arrays have been used for infrared (IR) imaging system applications: linear arrays for scanning systems (first generation) and two-dimensionalExpand
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Effect of Deposition Conditions on Mechanical Properties of Low-Temperature PECVD Silicon Nitride Films
The effect of deposition conditions on characteristic mechanical properties – elastic modulus and hardness – of low-temperature PECVD silicon nitrides is investigated using nanoindentation. It isExpand
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Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances
This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/ GaN HEMTs in terms of the following: 1) thermal resistance and 2) ohmic seriesExpand
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Improved quantitative mobility spectrum analysis for Hall characterization
We present an improved quantitative mobility spectrum analysis (i-QMSA) procedure for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivityExpand
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Nanoindentation of HgCdTe prepared by molecular beam epitaxy
Nanoindentation has been used to investigate the elastoplastic behavior of Hg0.7Cd0.3Te prepared by molecular beam epitaxy. It was found that Hg0.7Cd0.3Te had a modulus of elasticity of ∼50GPa andExpand
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New concepts in infrared photodetector designs
In 1959, Lawson and co-workers published the paper which triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Expand
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MEMS-based microspectrometer technologies for NIR and MIR wavelengths
Commercially manufactured near-infrared (NIR) instruments became available about 50 years ago. While they have been designed for laboratory use in a controlled environment and boast high performance,Expand
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A quasi-two-dimensional charge transport model of AlGaN/GaN high electron mobility transistors (HEMTs)
A quasi-two-dimensional charge transport model of AlGaN/GaN high electron mobility transistor has been developed that is capable of accurately predicting the drain current as well as small-signalExpand
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Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs
In this paper we report a study of the output admittance frequency dispersion characteristics of MOCVD-grown Al/sub 0.25/Ga/sub 0.75/N/GaN MODFETs. Our measurements were performed over the frequencyExpand
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MEMS-Based Tunable Fabry–Perot Filters for Adaptive Multispectral Thermal Imaging
This paper reports on a proof-of-concept microelectromechanical system-based Fabry-Perot filter that is capable of electrically tuning within the long-wave infrared thermal imaging band of 8-12 μm.Expand
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