The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates are reported. Pulsed room-temperature operation demonstrates wavelengths from 1.60 to 1.66… (More)
Amplified spontaneous emission measurements are investigated below threshold in InAs quantum-dot lasers emitting at 1.22 /spl mu/m. The dot layer of the laser was grown in a strained quantum well… (More)
By extending the net-gain modulation phasor approach to account for the discrete distribution of the gain and saturable absorber sections in the cavity, a convenient model is derived and… (More)
We investigate the dynamical response of a quantum dot photonic integrated circuit formed with a combination of eleven passive and active gain cells operating when these cells are appropriately… (More)
An alternative segmented-contact method for accurate measurement of the optical gain and absorption of quantum-dot and quantum-dash active materials with small optical gain is reported. The usual… (More)
Semiconductor lasers are grown on a GaAs substrate by MBE containing self-assembled InAs quantum dots (QDs) in an InGaAs quantum well, the so-called dot-in-a-well (DWELL) structure. The QDs are /spl… (More)
Introduction: It has been predicted that the threshold current density of quantum dot lasers should be lower than that of quantum well lasers due to the reduction of density of states [1]. In… (More)
The optical performance of quantum dot lasers with different dots-in-a-well (DWELL) structures is studied as a function of the well number and the indium composition in the InGaAs quantum well (QW)… (More)
A passively mode-locked laser with a 2.1-GHz fundamental repetition rate is demonstrated using a 20-mm-long monolithic two-section quantum-dot laser. A pulsewidth as short as 15.4 ps was measured… (More)
We investigate the small-signal modulation response of two-section, gain-lever, quantum-dot semiconductor lasers. A three-pole modulation function is derived from a 3-D set of rate equations, and a… (More)